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Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500 °C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(AlxGa1−x)0.5P-In0.5Ga0.5P double-heterostructure laser diodes.
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Kish et al. (1991) studied this question.
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