Crystallization of LPCVD amorphous silicon films, especially the initial crystallization states, has been studied by transmission electron microscopy (TEM), X-ray diffraction and electron spin resonance (ESR) techniques. For longer annealing times at 600°C, the X-ray diffracted intensity (crystalline component) increased and the electron spin density (mainly amorphous component) decreased; TEM cross-sectional observations indicated that crystallization was initiated only at the film-substrate interface, as reported previously, on the basis of Raman scattering measurements.
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Adachi et al. (1988) studied this question.
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