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July 1, 1978Journal of Applied Physics

Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

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Authors

LCL. CsepregiFraunhofer SocietyEKEamonn KennedyUniversity of UtahJMJ. W. MayerON Semiconductor (United States)

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Csepregi et al. (1978) studied this question.

synapsesocial.com/papers/69e52de590d379e88cd37cdfhttps://doi.org/10.1063/1.325397
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