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October 12, 2000Electronics Letters

InP/InGaAs uni-travelling-carrier photodiode with310 GHz bandwidth

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Authors

HIHiroshi ItôNEC (Japan)TFTadaomi FurutaTokyo Institute of TechnologySKSatoshi KodamaThe University of Tokyo

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Itô et al. (2000) studied this question.

synapsesocial.com/papers/6a7df166a7c6153d1433a0edhttps://doi.org/10.1049/el:20001274
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electron transport in InP at high electric fields1983 · 47 citations
  2. 2InP/InGaAs uni-travelling-carrier photodiode with220 GHz bandwidth1999 · 55 citations
  3. 3Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors1994 · 102 citations
  4. 4InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz1998 · 166 citations
  5. 5Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product1995 · 123 citations