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June 4, 1987Electronics Letters

High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator

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Authors

UKU. KorenCyberOptics (United States)BMB.I. MillerMerck & Co., Inc., Rahway, NJ, USA (United States)RTR.S. TuckerAT&T (United States)

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Koren et al. (1987) studied this question.

synapsesocial.com/papers/6a7e2be884a8fb417af70fa6https://doi.org/10.1049/el:19870445
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