Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

We report on the electronic passivation of n- and p-type GaAs using chemical vapor deposited cubic GaS. Au/GaS/GaAs fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor versus voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of ∼1011 eV−1 cm−2 on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.