What question did this study set out to answer?

To analyze the structural and optical characteristics of silicon heavily implanted with titanium beyond the Mott limit and processed using pulsed-laser melting.

June 1, 2011Journal of Applied PhysicsOpen Access

Sub-bandgap absorption in Ti implanted Si over the Mott limit

View Full Paper

Ask AI

Bookmark

Authors

JOJ. OleaUniversidad Complutense de Madrid APA. del PradoUniversidad Complutense de Madrid DPDavid PastorUniversidad Complutense de Madrid

Discussion

Member takes

Implication

Experimental study reveals strong sub-bandgap absorption in titanium-supersaturated silicon, indicating the formation of an intermediate band for enhanced solar energy harvesting.

Key Points

To analyze the structural and optical characteristics of silicon heavily implanted with titanium beyond the Mott limit and processed using pulsed-laser melting.
Implanted silicon with high titanium doses exceeding the Mott limit and annealed the samples via pulsed-laser melting across varied energy densities up to 1.8 J/cm².
Characterized structural lattice reconstruction and measured depth-resolved titanium distribution across a 150 nm thick surface layer.
Evaluated sub-bandgap optical absorption coefficients across different annealing conditions.
Pulsed-laser melting yielded a uniform, box-shaped titanium profile (~2 × 10²⁰ cm⁻³) within a 150 nm layer, with 1.8 J/cm² laser annealing restoring good lattice quality.
Strong sub-bandgap absorption was observed across all samples regardless of annealing energy density, exhibiting absorption coefficients between 4 × 10³ and 10⁴ cm⁻¹ due to intermediate band formation.

Cite This Study

Olea et al. (2011) studied this question.

synapsesocial.com/papers/6a7e52a8760ccf6bd0991003 https://doi.org/10.1063/1.3596525

View Full Paper

Ask AI

Bookmark

Implication

Experimental study reveals strong sub-bandgap absorption in titanium-supersaturated silicon, indicating the formation of an intermediate band for enhanced solar energy harvesting.

Sub-bandgap absorption in Ti implanted Si over the Mott limit

Discussion

Member takes

Implication

Key Points

Cite This Study

Sub-bandgap absorption in Ti implanted Si over the Mott limit

Discussion

Member takes

Implication

Key Points

Cite This Study

Also Consider

Also Consider