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A graphical method is given for calculating the efficiency of a bulk negative-resistance microwave oscillator. It is shown that, for a square-wave r.f. signal, InP 3-level oscillators should have an efficiency of over 20% at fields only twice threshold, and In0.2Ga0.8Sb oscillators should give an efficiency of over 35%
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C. Hilsum (1970) studied this question.
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