Indium selenide nanowire phase-change memory

Nonvolatile memory device using indium selenide nanowire as programmable resistive element was fabricated and its resistive switching property was studied as functions of electrical pulse width and voltage magnitude. The nanowire memory can be repeatedly switched between high-resistance (∼1011Ω) and low-resistance (∼6×105Ω) states which are attributed to amorphous and crystalline states, respectively. Once set to a specific state, the nanowire resistance is stable as measured at voltages up to 2V. This observation suggests that the nanowire can be programed into two distinct states with a large on-off resistance ratio of ∼105 with significant potential for nonvolatile information storage.