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May 12, 1986Applied Physics Letters

Dependence of silicon-on-insulator transistor parameters on oxygen implantation temperature

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Authors

JDJ. DavisUniversity of Nebraska–LincolnMTM.R. TaylorUniversity of New HavenGSG. D. T. SpillerBT Group (United Kingdom)

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Davis et al. (1986) studied this question.

synapsesocial.com/papers/6a7e9e9aba437ed6d89739bfhttps://doi.org/10.1063/1.97003
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