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July 1, 1984Applied Physics Letters

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

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Authors

CTC. G. TuppenUniversity of East AngliaMTM.R. TaylorUniversity of New HavenPHP.L.F. HemmentAT&T (United States)

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Tuppen et al. (1984) studied this question.

synapsesocial.com/papers/6a8917db7c664faad1126820https://doi.org/10.1063/1.95009
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1SIMS study of the SiO 2 /Si interface and of the Si+O 2 system1983 · 21 citations
  2. 2C.M.O.S. devices fabricated on buried SiO <sup>2</sup> layers formed by oxygen implantation into silicon1978 · 539 citations
  3. 3The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation1983 · 20 citations