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Near mask edges the distribution of implanted ions in a semiconductor is determined by the shape of the mask edge and the scattering of the ions during the slowing down process. A calculation for arbitrarily shaped mask edges is presented. Examples of vertical, ion etched, and chemically etched SiO2 masks on Si are evaluated. It is shown that in all cases the lateral spread of the ions is not to be neglected.
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Hartmut Runge (1977) studied this question.
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