Ferromagnetic (FM) films suitable for implementation in between interconnect layers of a standard CMOS fabrication process are demonstrated to yield considerable size reduction of monolithic radio frequency (RF) inductors, leading to lower cost. The deposition of a FM Cr(5 nm)/Fe/sub 10/Co/sub 90/(500 nm)/Cr(15 nm) stack is performed by magnetron sputtering at room temperature under a dc magnetic field of /spl sim/ 10 mT along the magnetic easy-axis. A lift-off technique, using a four-layer shadow mask, is used for pattern transfer to the magnetic stack to circumvent apparent difficulties in the patterning of FM films. A series of solenoid-type inductors with FM cores are demonstrated and compared to control devices with air cores. A more than eight-fold enhancement of the inductance and a seven-fold improvement of the quality factor are achieved.
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Zhuang et al. (2003) studied this question.
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