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March 1, 2003Journal of Applied Physics

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

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Authors

HLHauyu Baobab LiuNational Taiwan Normal UniversityMHM. HopkinsonUniversity of SheffieldCHC. N. Harrison

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Liu et al. (2003) studied this question.

synapsesocial.com/papers/6a7fa71da5be3b5d265f24dehttps://doi.org/10.1063/1.1542914
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Also Consider

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  1. 1The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures2000 · 157 citations
  2. 2Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates2000 · 25 citations
  3. 3Characterization of InAs quantum dots in strained InxGa1−xAs quantum wells2000 · 132 citations
  4. 4Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots1999 · 85 citations
  5. 5InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm1999 · 384 citations