CVD of GaN Films on Si(111). Chemically Clean Decomposition of Et2Ga(N3)·MeHNNH2

Hexagonal GaN thin films are deposited on Si(111) from diethylazidogallium methylhydrazine adduct in a high vacuum CVD system and at a relatively low deposition temperature. Characterization of the GaN thin films using double crystal XRD indicates an FWHM of 0.4. Pole figure and photoluminescence analysis produces results comparable to that of high-quality undoped h-GaN films. XPS analysis shows the atomic ratio of Ga/N to be 1:0.94. A CVD mechanism is proposed on the basis of GC-MS analysis suggesting precursor decomposition via the protonation of the ethyl group.