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This paper describes the results of a two-dmensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current when V/sub SG/ < V/sub FB/. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.
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Oka et al. (1980) studied this question.
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