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Au/GaAs samples are heat treated in the 400 to 450°C temperature range (in forming gas). The interdiffusion of Au and GaAs is investigated by RBS and EMP. The results reveal the enrichment of gold with gallium. Cross sectional images taken with TEM from the interface show the appearance of rectangular based pyramidal pits grown into the GaAs. Mostly these pits are Au single crystals, but in some cases the intermetallic phase of orthorhombic GaAu2 is identified.
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Pécz et al. (1986) studied this question.
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