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Thin-film field-effect transistors (TFTs) are readily fabricated using a semiconductor composite that is solution processed under ambient conditions for the conduction channel. The composite comprises single-walled carbon nanotubes (SWCNTs) embedded in poly-9,9'dioctyl-fluorene-co-bithiophene. Carrier mobility values approaching 10 cm2V-1s-1are obtained for the composite with relatively high SWCNT concentrations. When the SWCNT concentration is reduced for a large on/ off current ratio >; 106, the mobility remains decent around 0.3 cm2V-1s-1. The resultant TFTs display remarkable environmental and operational reliability. Nanotube-based composites are therefore of significance in printed electronics owing to their simplicity in device fabrication and competitiveness in device performance.
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Liu et al. (2011) studied this question.
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