GaAs p-i-n Photodiode Array on GaP Using Wafer Fusion

In this letter, we describe a novel wafer fusion process for transferring GaAs p-i-n junctions onto a GaP handle substrate. A process for patterning large arrays (30×30) of these photodiodes using a wet etch scheme is presented. We also present photoresponse characteristics of these diodes both with and without the high temperature wafer fusion process. Application of this device in an optically addressed adaptive optics system is also discussed.