A high mobility (∼1.0cm2∕Vs) n-type organic field-effect transistor is devised in terms of the combination of semiconducting and metallic charge-transfer (CT) compounds, namely, DBTTF-TCNQ crystals as channels and TTF-TCNQ thin films as electrodes for carrier injections on top of the crystals. Comparison of the field-effect properties for devices with conventional electrode materials indicates the successful demonstration of the interface band engineering with use of the CT materials.
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Takahashi et al. (2005) studied this question.
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