Simultaneous Fabrication of Vertical and 45° Mirrors of InP for Surface-Emitting Lasers Using Inclined Cl Ion Beams

Reactive ion beam etching (RIBE) of InP using inclined Cl ion beams has been studied. Straight-sloping side walls of InP grooves are fabricated using those of SiO 2 as etching masks. By controlling the wall inclination of the SiO 2 mask and the etch rate ratio of InP to SiO 2 , an InP groove with side-wall inclinations of 90° and 45° is obtained using one RIBE process. Furthermore, the walls of the groove are used for fabrication of the InGaAsP/InP surface-emitting laser with a Fabry-Perot resonator and a 45° mirror. A threshold current of 40 mA is obtained for the laser under continuous-wave operation at room temperature.