Characterization of a high-resolution novolak based negative electron-beam resist with 4 μC/cm2 sensitivity

A novel novolak based negative working resist, developed by Rohm and Haas Company, has been investigated for use in direct-write electron-beam lithography. The resist has demonstrated 0.3 μm resolution at a dose of 4 μC/cm2 . It displays high-dry etching resistance similar to that of conventional diazoquinone based positive resist. Results on the characterization of the resist and the development of a process are presented. In addition, the chemical properties and reaction mechanism of the resist are discussed briefly. The effects of postexposure-bake temperature and time on the resist image parameters, sensitivity, and resolution of the resist have been investigated. Exposure latitude and development latitude of the resist is discussed. Results of proximity effect correction using the GHOST method are presented.