Fluorinated SrTiO₃ as Charge-Trapping Layer for Nonvolatile Memory Applications

Charge-trapping properties of SrTiO3with and without fluorine incorporation are investigated by using an Al/Al2O3/SrTiO3/SiO2/Si structure. The memory device with a fluorinated SrTiO3film shows promising performance in terms of large memory window (8.8 V) by ±8-V sweeping voltage, large flatband-voltage (VFB) shift (2.5 V) at a low gate voltage of +6 V for 1 ms, negligible VFBshift after 105-cycle program/erase stressing, and improved data retention compared with that with out fluorine treatment. These advantages can be associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the fluorine incorporation.