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A kinetic model for chemical amplification resist systems, including a post exposure baking (PEB) process, is proposed. A negative tone EB resist SAL601 (Shipley) subjected to excimer laser exposure is investigated to examine the validity of the model. It is shown that the model can well explain the resist's crosslinking and development characteristics over a wide range of exposure and PEB conditions. Using the model, the catalytic chain length and process optimization are discussed from an analytical approach. Application of the model to resist profile simulation is also shown. The simulated resist profiles exhibit good agreement with the real resist pattern profiles.
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Fukuda et al. (1989) studied this question.
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