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A set of preliminary experiments are performed which suggest the feasibility of annealing implanted silicon wafers using pulsed CO2 laser radiation. This rapid annealing process does not lead to significant diffusion of the implanted species compared to that observed with thermal annealing. For phosphorus implanted silicon, electrical measurements show conversion to n-type with sheet resistance and crystal structure comparable to thermally annealed wafers.
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Hauck et al. (1981) studied this question.
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