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The influence of defects, generated by gamma irradiation in TGS single crystals, on the switching dynamics in low electric fields is studied by Barkhausen effect. The time-dependence of the counting rate A of Barkhausen pulses at various field strengths E, and the field-dependence of the number of pulses N are measured. These characteristics are found to be determined by the domain and defect structure of the sample. Moreover, the activation field for the displacement of a defect-clamped domain wall increases with defect concentration.
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B. Hilczer (1974) studied this question.
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