Ab initio total-energy calculations were used to examine (2×{}2) reconstruction models for the (111) and (1{}1{}1{}) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1{}1{}1{}) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.
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Kaxiras et al. (1986) studied this question.
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