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Mid-infrared photoconductivity in self-assembled InAs quantum dots is reported. By embedding the InAs dots in an AlxGa1−xAs matrix, normal incidence photoconductivity has been observed at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots. The optical response of the quantum dots is investigated for several different dot structures.
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Berryman et al. (1997) studied this question.
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