Chemical vapor deposition of metals: Part 2. Overview of selective CVD of Metals

The Selective chemical vapor deposition (CVD) of metals from metal‐containing compounds is reviewed and the approaches taken are classified according to the different physicochemical phenomena which take place on the growth and non‐growth surfaces. These include: an intrinsic difference in reaction rates, sacrificial solid‐state co‐reactant, activation of the growth surface, radiation‐induced activation of the growth surface, passivation of non‐growth surfaces, and a physical nucleation barrier. The results from the literature suggest that surface modification, in which the growth surface is activated or the non‐growth surface is passivated, is a promising method to control selectivity. However, few results are available from experiments with well‐characterized surfaces, making meaningful comparisons of the origin of selective CVD difficult to interpret.