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This analysis aims to apply chemical reaction kinetics principles to understand CVD reactions for optimization.

Fundamentals of Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) and Safety Management of Chemical SubstancesPart 3 : Reaction Analysis for Chemical Vapor Deposition (CVD) Reaction, and Process Controls

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Lecture analyzes CVD reaction kinetics and process controls, highlighting implications for industrial optimization.

This analysis aims to apply chemical reaction kinetics principles to understand CVD reactions for optimization.
Illustrated Arrhenius plots for CVD systems to reveal kinetic regimes.
Conducted reaction order analysis to indicate surface reaction limitations.
Applied findings to optimize W-CVD deposition in MOSFET fabrication.
Identified mass transport-limited regions with zero activation energy.
Showed surface reaction limitations at high partial pressures leading to saturation.
Achieved better W filling and coverage in MOSFETs under Langmuir-type conditions.

Atsushi SEKIGUCHI (2026) studied this question.

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