Low resistive tungsten nitride (W100−xNx) thin films have been deposited at 350–400 °C by plasma enhanced chemical vapor deposition. X-ray photoemission spectroscopy, Rutherford backscattering spectrometry, and x-ray diffraction show that the nitrogen composition in W100−xNx films can be easily controlled between 15 and 72 at. % corresponding to an increase of the NH3/WF6 partial pressure ratio and fcc structure W2N can be obtained. The resistivities of W100−xNx films are varied from 70 to 440 μΩ cm according to nitrogen composition.
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Lee et al. (1993) studied this question.
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