The interaction of deposited Cu 9 Al 4 intermetallic compound film with a silicon substrate is studied by Auger electron spectroscopy. Although the incorporation of silicon into the Cu 9 Al 4 film with low concentration level is observed, the interface is stable up to the annealing temperature of 700°C without forming aluminum spikes or a copper silicide layer. It is revealed that Cu 9 Al 4 film is a useful material to realize a stable interface when employed as a metallization material for silicon devices.
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Noya et al. (1991) studied this question.
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