We report measurements of the conduction-band offset in strained-layer superlattices of InxGa1−xAs/InP. Admittance spectroscopy was used to measure the activation energy for thermionic emission of electrons over InP barriers in n-type superlattices. Superlattice dimensions and x values were obtained from high-resolution x-ray diffraction and transmission electron microscopy studies. For x=0.37, 0.53, and 0.69, the values obtained for the conduction-band offset are 175±25 meV, 210±20 meV, and 315±25 meV, respectively.
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Cavicchi et al. (1989) studied this question.
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