Preparation of PbZrO ₃ –PbTiO ₃ Ferroelectric Thin Films by the Sol–Gel Process

Ferroelectric films, PbZr x Ti 1− x O 3 ( x = 0 to 0.6), have been prepared from corresponding metal alkoxides partially stabilized with acetylacetone through the sol‐gel process. The films dip‐coated in an ambient atmosphere were heat‐treated at 400°C for decomposition of residual organics and then at temperatures between 500° and 700°C for crystallization of the films. The perovskite phase precipitated at temperatures above 560°C, accompanied by an increase in dielectric constant. The dielectric constant of the films, which was comparable with that of sintered bodies, showed a maximum (∼620) at around x = 0.52 in PbZr x Ti 1− x O 3 . These films showed D – E hysteresis, with slightly higher values of coercive field, compared with those of sintered bodies.