SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate

Structural characterization of the epitaxial thin aluminum nitride (AlN) 1-μm-thick films grown on SiC/(111)Si substrate by molecular beam epitaxy method was done. The films are shown to be single crystals of (0002) orientation with parameter full width half maximum FWHMωθ = 0.5°. A comparative study of the film electrical properties with the films grown by chloride vapor-phase epitaxy has revealed the difference in polar axis orientation, pyroelectric response, and piezoelectric hystograms.