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We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well (MQW) laser diodes (LD's) fabricated on Si substrates by metallorganic chemical vapor deposition (MOCVD). The lowest threshold current was 115 mA at room temperature (at 293 K). This is the lowest value of reported laser diodes on Si.
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Shiraïshi et al. (1987) studied this question.
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