Stress reduction resulting in reduced degradation in GaAs lasers grown on Si substrates by post growth patterning and SiO2 layers

The thermally induced biaxial stress in GaAs lasers grown on Si substrates is reduced by patterning the active region to an effective width of 10 μm and by introducing a compensating stress from a thermally deposited SiO2 layer. The largest stress compensation is obtained for oxide stripe lasers and results in a significant reduction in the degradation rate of the lasers.