High-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy

We present results on high-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy. In addition to the dc operating characteristics, we also report the first impulse response and microwave frequency response measurements of GaAs-on-Si photodiodes. Results include an impulse response pulse width of 45 ps and a modulation corner frequency >4 GHz at a reverse bias of −3 V.