We report an ab initio calculation of periodically Si-{δ}-doped GaAs, solving the Schr\"odinger equation in a three-dimensional (3D) system. We show, in the regime of high donor concentration, that the subband {δ}, even for small period (p=45 {}), exhibits small dispersion as does a 2D system. Also, we discuss the stability of the Si sheet in the bulk, and the electronic properties of the clustering Si_Ga-{Si}As$.
No takes yet. Share an insight, caveat, or question.
Schmidt et al. (1995) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: