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The possibility of epitaxial growth of GaAs on Si substrate using liquid phase epitaxy is shown. The investigation of substrate orientation influence upon nucleation and growth of GaAs exhibited that the more preferable orientation on Si substrate is (100). The peculiarities of GaAs growth on Si by eutectic LPE are explained by the formation of the different types of “growth units” in supersaturated liquid phase.
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Brovkin et al. (1988) studied this question.
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