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With the time-of-flight technique we have measured the longitudinal diffusion coefficient of electrons in silicon at 300 K for fields from Ohmic up to 50 kV/cm. The results have been interpreted by means of Monte Carlo calculations with a theoretical model which includes the many-valley (ellipsoidal and nonparabolic) structure of the band, acoustic intravalley, and several f and g intervalley scattering mechanisms.
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Canali et al. (1975) studied this question.
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