Metal-clad ridge-waveguide (MCRW) lasers have been prepared in InGaAsP-InP for 1.3 µm wavelength by liquid-phase epitaxy. CW threshold currents as low as 28 mA and efficiencies above 0.25 mW/mA per facet are achieved. Lasers with 2-3 µm wide stripes show stable operation in the fundamental lateral mode and linear light-current characteristics up to more than 10 mW. The maximum temperature for CW operation of upside-down mounted devices is 75°C.
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Amann et al. (1986) studied this question.