Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1969Journal of Applied Physics

Optical Properties of n-Type GaAs. III. Relative Band-Edge Recombination Efficiency of Si- and Te-Doped Crystals before and after Heat Treatment

View Full Paper
Ask AI
Bookmark
Share

Authors

CHC. J. HwangHewlett-Packard (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

C. J. Hwang (1969) studied this question.

synapsesocial.com/papers/6a8290d0409efddc54d4a33chttps://doi.org/10.1063/1.1657237
View Full Paper
Ask AI
Bookmark
Share