Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy

A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take-off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 ± 80 Å.