High current of GaInNAs solar cell integrating distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

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GaInNAs junctions can be applied to the lattice-matched five-junction (5J) or six-junction (6J) solar cells to achieve ultra-high efficiency. In this work, a GaInNAs solar cell integrating distributed Bragg reflectors (DBR) is grown by metalorganic vapor phase epitaxy. According to external quantum efficiency measurements, the photocurrent can be improved by ∼20% due to DBR. Meanwhile, a short-circuit current ( J sc ) of GaInNAs DBR-cell is obtained high as 13.78 mA cm −2 under the air mass (AM0) spectrum, which is completely satisfied the demand of 36%-efficiency 5J solar cell (∼ 12 mA cm −2 ). Finally, Dark-IV characteristics reveal that the introduction of DBR does not deteriorate GaInNAs quality.