We investigate the composition profile of M-plane (In,Ga)N/GaN(11̄00) multiple quantum well structures by both high-resolution x-ray diffractometry and secondary ion mass spectrometry. The results reveal significant In surface segregation, resulting in a reduced In content and much wider wells than intended. The resulting In content of ∼7% is lower than that obtained (∼15%) for corresponding C-plane structures grown under identical conditions, suggesting a lower In incorporation efficiency on the (11̄00) plane compared to the (0001) plane. Finally, the dependence of the transition energies on the well thickness of these M-plane quantum wells evidences the absence of internal electrostatic fields along the growth direction.
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Sun et al. (2003) studied this question.