Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

GaAs has been grown on pseudomorphic Si (100) surfaces and (100) surfaces misoriented 4° toward [011] and [001] in order to study the quality of the GaAs on Si interface in the absence of misfit dislocations. We obtain completely two-dimensional single-domain GaAs epitaxy after only 80 Å of deposition as observed by in situ high-energy electron diffraction. Transmission electron microscopy verifies that the GaAs grown on pseudomorphic Si is free of antiphase domains and other notable defects.