Answers are grounded in this paper and cite their sources.
The total concentration profiles of various doses of antimony, implanted into silicon at 100 keV, have been determined by a new technique, using Kr+ ions to detect selectively the antimony (as Sb-M X-rays) at the expense of the silicon. Since most of these X-rays arise from only a few tens of Angstroms below the surface of the silicon, this allows the X-ray generation to be used in conjunction with an anodic stripping technique to obtain the antimony depth distribution. These profiles are compared with others, obtained by measuring the donor concentration as a function of depth, using standard Hall effect and conductivity measurements. A significant difference between these profiles was observed, which is thought to be due to the suppression of electrical activity which occurs as the result of lattice damage. Confirmatory evidence is presented in the form of electron microscope observations of the implanted region at various depths below the silicon surface.
No takes yet. Share an insight, caveat, or question.
Nelson et al. (1970) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: