Current injection at silicon-rich oxide (SRO)-thermal oxide and SRO-CVD (chemical-vapor-deposited) oxide interfaces is shown to be interface-limited. I-V characteristics for both interfaces fit a model for injection enhancement that depends on the curvature of Si islands in the SRO. Results indicate that only a fraction of the Si islands contribute to the injection. The asymmetry observed in dual-electron-injector structures (DEIS) can be explained by a 2.5-times difference in the number of islands between top and bottom injecting interfaces.>
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Chang et al. (1988) studied this question.
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