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November 1, 1977Journal of Applied Physics

Evidence for surface asperity mechanism of conductivity in oxide grown on polycrystalline silicon

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Authors

RARon AndersonEmbry–Riddle Aeronautical UniversityDKD. R. KerrIBM (United States)

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Anderson et al. (1977) studied this question.

synapsesocial.com/papers/6a82a4490de57fd8eeb289f8https://doi.org/10.1063/1.323510
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